Jeon, H.; Shin, J.; Choi, W.; Bae, S.; Bae, K.; Bin, S.; Kim, S.; Ju, Y.; Ahn, M.; Mun, G.;
et al. Highly Linear 2.6 GHz Band InGaP/GaAs HBT Power Amplifier IC Using a Dynamic Predistorter. Electronics 2025, 14, 2300.
https://doi.org/10.3390/electronics14112300
AMA Style
Jeon H, Shin J, Choi W, Bae S, Bae K, Bin S, Kim S, Ju Y, Ahn M, Mun G,
et al. Highly Linear 2.6 GHz Band InGaP/GaAs HBT Power Amplifier IC Using a Dynamic Predistorter. Electronics. 2025; 14(11):2300.
https://doi.org/10.3390/electronics14112300
Chicago/Turabian Style
Jeon, Hyeongjin, Jaekyung Shin, Woojin Choi, Sooncheol Bae, Kyungdong Bae, Soohyun Bin, Sangyeop Kim, Yunhyung Ju, Minseok Ahn, Gyuhyeon Mun,
and et al. 2025. "Highly Linear 2.6 GHz Band InGaP/GaAs HBT Power Amplifier IC Using a Dynamic Predistorter" Electronics 14, no. 11: 2300.
https://doi.org/10.3390/electronics14112300
APA Style
Jeon, H., Shin, J., Choi, W., Bae, S., Bae, K., Bin, S., Kim, S., Ju, Y., Ahn, M., Mun, G., Hwang, K. C., Lee, K.-Y., & Yang, Y.
(2025). Highly Linear 2.6 GHz Band InGaP/GaAs HBT Power Amplifier IC Using a Dynamic Predistorter. Electronics, 14(11), 2300.
https://doi.org/10.3390/electronics14112300