Gan, Q.; Zheng, W.; Chen, Z.; Zhang, Y.; Chen, C.; Huang, X.
A 62.54 nW Carbon–Silicon Heterogeneous-Integrated SRAM with Novel Low-Power Memory Cell. Electronics 2025, 14, 2004.
https://doi.org/10.3390/electronics14102004
AMA Style
Gan Q, Zheng W, Chen Z, Zhang Y, Chen C, Huang X.
A 62.54 nW Carbon–Silicon Heterogeneous-Integrated SRAM with Novel Low-Power Memory Cell. Electronics. 2025; 14(10):2004.
https://doi.org/10.3390/electronics14102004
Chicago/Turabian Style
Gan, Qiaoying, Weiyi Zheng, Zhifeng Chen, Yuyan Zhang, Chengying Chen, and Xindong Huang.
2025. "A 62.54 nW Carbon–Silicon Heterogeneous-Integrated SRAM with Novel Low-Power Memory Cell" Electronics 14, no. 10: 2004.
https://doi.org/10.3390/electronics14102004
APA Style
Gan, Q., Zheng, W., Chen, Z., Zhang, Y., Chen, C., & Huang, X.
(2025). A 62.54 nW Carbon–Silicon Heterogeneous-Integrated SRAM with Novel Low-Power Memory Cell. Electronics, 14(10), 2004.
https://doi.org/10.3390/electronics14102004