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Journal: Electronics, 2024
Volume: 13
Number: 996
Article:
A Behavior Model of SiC DMOSFET Considering Thermal-Runaway Failures in Short-Circuit and Avalanche Breakdown Faults
Authors:
by
Yifan Wu, Chi Li, Zedong Zheng, Lianzhong Wang, Wenxian Zhao and Qifeng Zou
Link:
https://www.mdpi.com/2079-9292/13/5/996
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