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Journal: Electronics, 2024
Volume: 13
Number: 786
Article:
Simulation Study of 4H-SiC Low Turn-Off Loss and Snapback-Free Reverse-Conducting Gate Turn-Off Thyristor with N-Float Structure
Authors:
by
Chengcheng Wu, Juntao Li, Zhiqiang Li, Lin Zhang, Kun Zhou and Xiaochuan Deng
Link:
https://www.mdpi.com/2079-9292/13/4/786
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