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Journal: ElectronicsVolume: 13Number: 653
Article: Asymmetric GaN High Electron Mobility Transistors Design with InAlN Barrier at Source Side and AlGaN Barrier at Drain Side
  • Authors:
  • Beibei Lv,
  • Lixing Zhang and
  • Jiongjiong Mo*
Link: https://www.mdpi.com/2079-9292/13/3/653

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