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Journal: Electronics, 2024
Volume: 13
Number: 653
Article:
Asymmetric GaN High Electron Mobility Transistors Design with InAlN Barrier at Source Side and AlGaN Barrier at Drain Side
Authors:
by
Beibei Lv, Lixing Zhang and Jiongjiong Mo
Link:
https://www.mdpi.com/2079-9292/13/3/653
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