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Journal: Electronics, 2024
Volume: 13
Number: 596

Article: The Effect of Diluted N2O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor
Authors: by Zhihua Dong, Leifeng Jiang, Manqi Su, Chunhong Zeng, Hui Liu, Botong Li, Yuhua Sun, Qi Cui, Zhongming Zeng and Baoshun Zhang
Link: https://www.mdpi.com/2079-9292/13/3/596

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