Order Article Reprints

Dong Z, Jiang L, Su M, Zeng C, Liu H, Li B, Sun Y, Cui Q, Zeng Z, Zhang B. The Effect of Diluted N₂O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor. Electronics. 2024; 13(3):596. https://doi.org/10.3390/electronics13030596

Dong, Zhihua, Leifeng Jiang, Manqi Su, Chunhong Zeng, Hui Liu, Botong Li, Yuhua Sun, Qi Cui, Zhongming Zeng, and Baoshun Zhang. 2024. "The Effect of Diluted N₂O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor" Electronics 13, no. 3: 596. https://doi.org/10.3390/electronics13030596

Dong, Z., Jiang, L., Su, M., Zeng, C., Liu, H., Li, B., Sun, Y., Cui, Q., Zeng, Z., & Zhang, B. (2024). The Effect of Diluted N₂O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor. Electronics, 13(3), 596. https://doi.org/10.3390/electronics13030596