Wu, Q.; Xie, C.; Song, S.; Ding, X.; Li, X.; Song, Z.
Enhanced Readout Reliability in Phase Change Memory with a Dual-Sensing-Margin Offset-Compensated Sense Amplifier. Electronics 2024, 13, 4488.
https://doi.org/10.3390/electronics13224488
AMA Style
Wu Q, Xie C, Song S, Ding X, Li X, Song Z.
Enhanced Readout Reliability in Phase Change Memory with a Dual-Sensing-Margin Offset-Compensated Sense Amplifier. Electronics. 2024; 13(22):4488.
https://doi.org/10.3390/electronics13224488
Chicago/Turabian Style
Wu, Qingyu, Chenchen Xie, Sannian Song, Xing Ding, Xi Li, and Zhitang Song.
2024. "Enhanced Readout Reliability in Phase Change Memory with a Dual-Sensing-Margin Offset-Compensated Sense Amplifier" Electronics 13, no. 22: 4488.
https://doi.org/10.3390/electronics13224488
APA Style
Wu, Q., Xie, C., Song, S., Ding, X., Li, X., & Song, Z.
(2024). Enhanced Readout Reliability in Phase Change Memory with a Dual-Sensing-Margin Offset-Compensated Sense Amplifier. Electronics, 13(22), 4488.
https://doi.org/10.3390/electronics13224488