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Volume 13
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Article

A Critical Analysis and Comparison of the Effect of Source Inductance on 3- and 4-Lead SuperJunction MOSFETs Turn-Off

by
Santi Agatino Rizzo
1,*,
Nunzio Salerno
1,
Cristina Ventura
1,
Alfio Scuto
2 and
Giuseppe Sorrentino
2
1
Department of Electrical Electronic and Computer Engineering (DIEEI), University of Catania, 95125 Catania, Italy
2
STMicroelectronics, 95121 Catania, Italy
*
Author to whom correspondence should be addressed.
Electronics 2024, 13(20), 4051; https://doi.org/10.3390/electronics13204051
Submission received: 30 August 2024 / Revised: 10 October 2024 / Accepted: 13 October 2024 / Published: 15 October 2024
(This article belongs to the Special Issue Power Electronics in Italy—Emerging Electronic Power Technologies and Electronic Devices in the Industrial 4.0 Era)
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Abstract

This paper critically compares the turn-off performance of two package solutions, 3-lead (3L) vs. 4-lead (4L), in SuperJunction MOSFETs. It is commonly assumed that the better performance (lower switching losses) of the 4L MOSFET is obtained thanks to the decoupling of the power and driving loops. On the contrary, in this work, the experimental results, circuit models and Kirchhoff laws show that the turn-off improvement (lower turn-off losses) obtained by adopting the Kelvin source is due to the lower inductance of the driver loop of the 4L MOSFET, instead of the decoupling between the driver and power loops. In detail, an inductor is added to the gate path of the 4L MOSFET to obtain a total inductance in the driver loop equal to the 3L counterpart. The experimental results show that the 4L MOSFET presents the same drain current slew rate under this condition, although the driver and power loops are still decoupled.
Keywords: MOSFETs; Kelvin source; switching losses; parasitic inductance; device modeling MOSFETs; Kelvin source; switching losses; parasitic inductance; device modeling

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MDPI and ACS Style

Rizzo, S.A.; Salerno, N.; Ventura, C.; Scuto, A.; Sorrentino, G. A Critical Analysis and Comparison of the Effect of Source Inductance on 3- and 4-Lead SuperJunction MOSFETs Turn-Off. Electronics 2024, 13, 4051. https://doi.org/10.3390/electronics13204051

AMA Style

Rizzo SA, Salerno N, Ventura C, Scuto A, Sorrentino G. A Critical Analysis and Comparison of the Effect of Source Inductance on 3- and 4-Lead SuperJunction MOSFETs Turn-Off. Electronics. 2024; 13(20):4051. https://doi.org/10.3390/electronics13204051

Chicago/Turabian Style

Rizzo, Santi Agatino, Nunzio Salerno, Cristina Ventura, Alfio Scuto, and Giuseppe Sorrentino. 2024. "A Critical Analysis and Comparison of the Effect of Source Inductance on 3- and 4-Lead SuperJunction MOSFETs Turn-Off" Electronics 13, no. 20: 4051. https://doi.org/10.3390/electronics13204051

APA Style

Rizzo, S. A., Salerno, N., Ventura, C., Scuto, A., & Sorrentino, G. (2024). A Critical Analysis and Comparison of the Effect of Source Inductance on 3- and 4-Lead SuperJunction MOSFETs Turn-Off. Electronics, 13(20), 4051. https://doi.org/10.3390/electronics13204051

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