Kim, J.; Lee, G.; Cho, K.; Park, J.Y.; Min, B.-G.; Jeong, J.; Ji, H.-G.; Chang, W.; Lee, J.-M.; Kang, D.-M.
The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors. Electronics 2024, 13, 4038.
https://doi.org/10.3390/electronics13204038
AMA Style
Kim J, Lee G, Cho K, Park JY, Min B-G, Jeong J, Ji H-G, Chang W, Lee J-M, Kang D-M.
The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors. Electronics. 2024; 13(20):4038.
https://doi.org/10.3390/electronics13204038
Chicago/Turabian Style
Kim, Junhyung, Gyejung Lee, Kyujun Cho, Jong Yul Park, Byoung-Gue Min, Junhyung Jeong, Hong-Gu Ji, Woojin Chang, Jong-Min Lee, and Dong-Min Kang.
2024. "The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors" Electronics 13, no. 20: 4038.
https://doi.org/10.3390/electronics13204038
APA Style
Kim, J., Lee, G., Cho, K., Park, J. Y., Min, B.-G., Jeong, J., Ji, H.-G., Chang, W., Lee, J.-M., & Kang, D.-M.
(2024). The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors. Electronics, 13(20), 4038.
https://doi.org/10.3390/electronics13204038
