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Journal: Electronics, 2024
Volume: 13
Number: 2758
Article:
A Multiscale Simulation on Aluminum Ion Implantation-Induced Defects in 4H-SiC MOSFETs
Authors:
by
Yawen Wang, Haipeng Lan, Qiwei Shangguan, Yawei Lv and Changzhong Jiang
Link:
https://www.mdpi.com/2079-9292/13/14/2758
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