Xie, X.; Qi, J.; Wang, H.; Liu, Z.; Wu, W.; Lee, C.; Zhao, Y.
The Excellent Bending Limit of a Flexible Si-Based Hf0.5Zr0.5O2 Ferroelectric Capacitor with an Al Buffer Layer. Electronics 2024, 13, 24.
https://doi.org/10.3390/electronics13010024
AMA Style
Xie X, Qi J, Wang H, Liu Z, Wu W, Lee C, Zhao Y.
The Excellent Bending Limit of a Flexible Si-Based Hf0.5Zr0.5O2 Ferroelectric Capacitor with an Al Buffer Layer. Electronics. 2024; 13(1):24.
https://doi.org/10.3390/electronics13010024
Chicago/Turabian Style
Xie, Xinyu, Jiabin Qi, Hui Wang, Zongfang Liu, Wenhao Wu, Choonghyun Lee, and Yi Zhao.
2024. "The Excellent Bending Limit of a Flexible Si-Based Hf0.5Zr0.5O2 Ferroelectric Capacitor with an Al Buffer Layer" Electronics 13, no. 1: 24.
https://doi.org/10.3390/electronics13010024
APA Style
Xie, X., Qi, J., Wang, H., Liu, Z., Wu, W., Lee, C., & Zhao, Y.
(2024). The Excellent Bending Limit of a Flexible Si-Based Hf0.5Zr0.5O2 Ferroelectric Capacitor with an Al Buffer Layer. Electronics, 13(1), 24.
https://doi.org/10.3390/electronics13010024
