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Journal: Electronics, 2023
Volume: 12
Number: 1473

Article: Influence of Proton Irradiation Energy on Gate–Channel Low-Field Electron Mobility in AlGaN/GaN HEMTs
Authors: by Qizheng Ji, Jun Liu, Ming Yang, Xiaofeng Hu, Guangfu Wang, Menglin Qiu and Shanghe Liu
Link: https://www.mdpi.com/2079-9292/12/6/1473

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