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        Journal: Electronics, 2023
        Volume: 12 
                	Number: 1473 
                
        
        Article:
        Influence of Proton Irradiation Energy on Gate–Channel Low-Field Electron Mobility in AlGaN/GaN HEMTs 
        Authors: 
       	by
                    Qizheng Ji, Jun Liu, Ming Yang, Xiaofeng Hu, Guangfu Wang, Menglin Qiu and Shanghe Liu        
        Link:
        https://www.mdpi.com/2079-9292/12/6/1473
        
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