A Fully Integrated Solid-State Charge Detector with through Fused Silica Glass via Process

Wu, Xiaomeng; Wen, Liangjian; Cao, Liqiang; Cao, Guofu; Li, Gaosong; Fu, Yasheng; Yu, Zhongyao; Fang, Zhidan; Wang, Qidong

doi:10.3390/electronics12041045

Open AccessArticle

A Fully Integrated Solid-State Charge Detector with through Fused Silica Glass via Process

by

Xiaomeng Wu

^1,2,

Liangjian Wen

³,

Liqiang Cao

¹,

Guofu Cao

³,

Gaosong Li

³,

Yasheng Fu

³,

Zhongyao Yu

¹,

Zhidan Fang

¹ and

Qidong Wang

^1,*

¹

Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China

²

School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 101408, China

³

Institute of High Energy Physics Chinese Academy of Sciences, Beijing 100049, China

^*

Author to whom correspondence should be addressed.

Electronics 2023, 12(4), 1045; https://doi.org/10.3390/electronics12041045

Submission received: 21 December 2022 / Revised: 13 February 2023 / Accepted: 15 February 2023 / Published: 20 February 2023

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Abstract

A charge detector is a vital component in neutrino and dark matter detection. The integration of a charge collector in the form of flat pads and readout modules has been proposed as an optimization method as it can reduce noise and installation complexity. As a substrate, fused silica glass has attracted considerable attention due to its low radioactive background properties. In this research, based on the application requirements of a high charge collection rate and low noise, the structure of the charge detector was designed using calculation and simulation methods. The entire manufacturing process is described. In addition, a novel through glass via (TGV) structure composed of a conformal metal layer and a photosensitive material that is easy to fabricate and has high morphological compatibility with via filling is proposed. The curing property of the new material was characterized. A fully integrated solid-state charge detector with 32 groups of TGVs was realized. Additionally, the electrical properties of key structures were tested and analyzed.

Keywords: charge detection; low radioactive background; through glass via (TGV); fully filled; photosensitive material; electrical property

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MDPI and ACS Style

Wu, X.; Wen, L.; Cao, L.; Cao, G.; Li, G.; Fu, Y.; Yu, Z.; Fang, Z.; Wang, Q. A Fully Integrated Solid-State Charge Detector with through Fused Silica Glass via Process. Electronics 2023, 12, 1045. https://doi.org/10.3390/electronics12041045

AMA Style

Wu X, Wen L, Cao L, Cao G, Li G, Fu Y, Yu Z, Fang Z, Wang Q. A Fully Integrated Solid-State Charge Detector with through Fused Silica Glass via Process. Electronics. 2023; 12(4):1045. https://doi.org/10.3390/electronics12041045

Chicago/Turabian Style

Wu, Xiaomeng, Liangjian Wen, Liqiang Cao, Guofu Cao, Gaosong Li, Yasheng Fu, Zhongyao Yu, Zhidan Fang, and Qidong Wang. 2023. "A Fully Integrated Solid-State Charge Detector with through Fused Silica Glass via Process" Electronics 12, no. 4: 1045. https://doi.org/10.3390/electronics12041045

APA Style

Wu, X., Wen, L., Cao, L., Cao, G., Li, G., Fu, Y., Yu, Z., Fang, Z., & Wang, Q. (2023). A Fully Integrated Solid-State Charge Detector with through Fused Silica Glass via Process. Electronics, 12(4), 1045. https://doi.org/10.3390/electronics12041045

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A Fully Integrated Solid-State Charge Detector with through Fused Silica Glass via Process

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