Next Article in Journal
Rice Disease Identification Method Based on Attention Mechanism and Deep Dense Network
Next Article in Special Issue
Generating the Generator: A User-Driven and Template-Based Approach towards Analog Layout Automation
Previous Article in Journal
Experimental Machine Learning Approach for Optical Turbulence and FSO Outage Performance Modeling
Previous Article in Special Issue
Pre-Layout Parasitic-Aware Design Optimizing for RF Circuits Using Graph Neural Network
 
 
Font Type:
Arial Georgia Verdana
Font Size:
Aa Aa Aa
Line Spacing:
Column Width:
Background:
Article

Temperature and Power Supply Compensated CMOS Clock Circuit Based on Ring Oscillator

Department of Electronic Devices, Circuits and Architectures, Faculty of Electronics, Telecommunications and Information Technology, University Politehnica of Bucharest, 060042 Bucharest, Romania
*
Author to whom correspondence should be addressed.
Electronics 2023, 12(3), 507; https://doi.org/10.3390/electronics12030507
Submission received: 25 November 2022 / Revised: 12 January 2023 / Accepted: 13 January 2023 / Published: 18 January 2023

Abstract

Improved performance operational amplifier demand has continuously increased. IC designers use the charge pump technique as an advanced solution to implement the amplifier’s rail−to−rail input stage, but the need for a large load capacitor is a serious downside. To reduce this passive component value, high−frequency clock circuits with a 50% duty cycle should be implemented. This paper focuses on designing such a circuit that is further compensated with temperature and power supply, maintaining these performances even when process variations occur, starting from a ring oscillator as the architecture core. A pre−layout 50 MHz center frequency at 25 °C with a 1.6 temperature percentage error was achieved. Post−layout simulations to account for parasitic effects were also performed, with a 48.9 MHz center frequency reached. Distinct methods that control the frequency variation were discussed and established. Performance comparison of the designed PLL with previously reported clock circuits in the CMOS process was concluded, with superior results such as power consumption, die area, and temperature range accomplished.
Keywords: ring oscillator; LDO; frequency oscillation; CMOS technology; level−shifter; charge−pump ring oscillator; LDO; frequency oscillation; CMOS technology; level−shifter; charge−pump

Share and Cite

MDPI and ACS Style

Stancu, C.; Neacsu, A.; Profirescu, O.; Dobrescu, D.; Dobrescu, L. Temperature and Power Supply Compensated CMOS Clock Circuit Based on Ring Oscillator. Electronics 2023, 12, 507. https://doi.org/10.3390/electronics12030507

AMA Style

Stancu C, Neacsu A, Profirescu O, Dobrescu D, Dobrescu L. Temperature and Power Supply Compensated CMOS Clock Circuit Based on Ring Oscillator. Electronics. 2023; 12(3):507. https://doi.org/10.3390/electronics12030507

Chicago/Turabian Style

Stancu, Cristian, Andrei Neacsu, Ovidiu Profirescu, Dragos Dobrescu, and Lidia Dobrescu. 2023. "Temperature and Power Supply Compensated CMOS Clock Circuit Based on Ring Oscillator" Electronics 12, no. 3: 507. https://doi.org/10.3390/electronics12030507

APA Style

Stancu, C., Neacsu, A., Profirescu, O., Dobrescu, D., & Dobrescu, L. (2023). Temperature and Power Supply Compensated CMOS Clock Circuit Based on Ring Oscillator. Electronics, 12(3), 507. https://doi.org/10.3390/electronics12030507

Note that from the first issue of 2016, this journal uses article numbers instead of page numbers. See further details here.

Article Metrics

Back to TopTop