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Journal: Electronics, 2023
Volume: 12
Number: 4764

Article: SiC Trench MOSFET with Depletion-Mode pMOS for Enhanced Short-Circuit Capability and Switching Performance
Authors: by Hengyu Yu, Limeng Shi, Monikuntala Bhattacharya, Michael Jin, Jiashu Qian and Anant K. Agarwal
Link: https://www.mdpi.com/2079-9292/12/23/4764

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