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Journal: Electronics, 2023
Volume: 12
Number: 4764
Article:
SiC Trench MOSFET with Depletion-Mode pMOS for Enhanced Short-Circuit Capability and Switching Performance
Authors:
by
Hengyu Yu, Limeng Shi, Monikuntala Bhattacharya, Michael Jin, Jiashu Qian and Anant K. Agarwal
Link:
https://www.mdpi.com/2079-9292/12/23/4764
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