Yu, H.;                     Shi, L.;                     Bhattacharya, M.;                     Jin, M.;                     Qian, J.;                     Agarwal, A.K.    
        SiC Trench MOSFET with Depletion-Mode pMOS for Enhanced Short-Circuit Capability and Switching Performance. Electronics 2023, 12, 4764.
    https://doi.org/10.3390/electronics12234764
    AMA Style
    
                                Yu H,                                 Shi L,                                 Bhattacharya M,                                 Jin M,                                 Qian J,                                 Agarwal AK.        
                SiC Trench MOSFET with Depletion-Mode pMOS for Enhanced Short-Circuit Capability and Switching Performance. Electronics. 2023; 12(23):4764.
        https://doi.org/10.3390/electronics12234764
    
    Chicago/Turabian Style
    
                                Yu, Hengyu,                                 Limeng Shi,                                 Monikuntala Bhattacharya,                                 Michael Jin,                                 Jiashu Qian,                                 and Anant K. Agarwal.        
                2023. "SiC Trench MOSFET with Depletion-Mode pMOS for Enhanced Short-Circuit Capability and Switching Performance" Electronics 12, no. 23: 4764.
        https://doi.org/10.3390/electronics12234764
    
    APA Style
    
                                Yu, H.,                                 Shi, L.,                                 Bhattacharya, M.,                                 Jin, M.,                                 Qian, J.,                                 & Agarwal, A. K.        
        
        (2023). SiC Trench MOSFET with Depletion-Mode pMOS for Enhanced Short-Circuit Capability and Switching Performance. Electronics, 12(23), 4764.
        https://doi.org/10.3390/electronics12234764