Yu, H.; Shi, L.; Bhattacharya, M.; Jin, M.; Qian, J.; Agarwal, A.K.
SiC Trench MOSFET with Depletion-Mode pMOS for Enhanced Short-Circuit Capability and Switching Performance. Electronics 2023, 12, 4764.
https://doi.org/10.3390/electronics12234764
AMA Style
Yu H, Shi L, Bhattacharya M, Jin M, Qian J, Agarwal AK.
SiC Trench MOSFET with Depletion-Mode pMOS for Enhanced Short-Circuit Capability and Switching Performance. Electronics. 2023; 12(23):4764.
https://doi.org/10.3390/electronics12234764
Chicago/Turabian Style
Yu, Hengyu, Limeng Shi, Monikuntala Bhattacharya, Michael Jin, Jiashu Qian, and Anant K. Agarwal.
2023. "SiC Trench MOSFET with Depletion-Mode pMOS for Enhanced Short-Circuit Capability and Switching Performance" Electronics 12, no. 23: 4764.
https://doi.org/10.3390/electronics12234764
APA Style
Yu, H., Shi, L., Bhattacharya, M., Jin, M., Qian, J., & Agarwal, A. K.
(2023). SiC Trench MOSFET with Depletion-Mode pMOS for Enhanced Short-Circuit Capability and Switching Performance. Electronics, 12(23), 4764.
https://doi.org/10.3390/electronics12234764