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Journal: Electronics, 2023
Volume: 12
Number: 4233

Article: Recovery Effect of Hot-Carrier Stress on γ-ray-Irradiated 0.13 μm Partially Depleted SOI n-MOSFETs
Authors: by Lan Lin, Zhongchao Cong and Chunlei Jia
Link: https://www.mdpi.com/2079-9292/12/20/4233

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