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Electronics2023, 12(14), 3011;https://doi.org/10.3390/electronics12143011

Journal: ElectronicsVolume: 12Number: 3011

Article: Test Structures for the Characterization of the Gate Resistance in 16 nm FinFET RF Transistors

Authors:
Mario Lauritano^1,2,*,
Peter Baumgartner^1,* and
Ahmet Çağri Ulusoy²

Link: https://www.mdpi.com/2079-9292/12/14/3011

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