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Journal: Electronics, 2023
Volume: 12
Number: 2551

Article: Experimental Comparison of a New 1.2 kV 4H-SiC Split-Gate MOSFET with Conventional SiC MOSFETs in Terms of Reliability Robustness
Authors: by Hao Liu, Jiaxing Wei, Zhaoxiang Wei, Siyang Liu and Longxing Shi
Link: https://www.mdpi.com/2079-9292/12/11/2551

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