Zhang, J.F.; Gao, R.; Duan, M.; Ji, Z.; Zhang, W.; Marsland, J.
Bias Temperature Instability of MOSFETs: Physical Processes, Models, and Prediction. Electronics 2022, 11, 1420.
https://doi.org/10.3390/electronics11091420
AMA Style
Zhang JF, Gao R, Duan M, Ji Z, Zhang W, Marsland J.
Bias Temperature Instability of MOSFETs: Physical Processes, Models, and Prediction. Electronics. 2022; 11(9):1420.
https://doi.org/10.3390/electronics11091420
Chicago/Turabian Style
Zhang, Jian Fu, Rui Gao, Meng Duan, Zhigang Ji, Weidong Zhang, and John Marsland.
2022. "Bias Temperature Instability of MOSFETs: Physical Processes, Models, and Prediction" Electronics 11, no. 9: 1420.
https://doi.org/10.3390/electronics11091420
APA Style
Zhang, J. F., Gao, R., Duan, M., Ji, Z., Zhang, W., & Marsland, J.
(2022). Bias Temperature Instability of MOSFETs: Physical Processes, Models, and Prediction. Electronics, 11(9), 1420.
https://doi.org/10.3390/electronics11091420