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Journal: Electronics, 2022
Volume: 11
Number: 3820
Article:
HfOx/Ge RRAM with High ON/OFF Ratio and Good Endurance
Authors:
by
Na Wei, Xiang Ding, Shifan Gao, Wenhao Wu and Yi Zhao
Link:
https://www.mdpi.com/2079-9292/11/22/3820
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