Order Article Reprints

Wang B, Wang Y, Feng R, Wei H, Cao S, Liu T, Liu X, Li H, Ding P, Jin Z. High-Performance InGaAs HEMTs on Si Substrates for RF Applications. Electronics. 2022; 11(2):259. https://doi.org/10.3390/electronics11020259

Wang, Bo, Yanfu Wang, Ruize Feng, Haomiao Wei, Shurui Cao, Tong Liu, Xiaoyu Liu, Haiou Li, Peng Ding, and Zhi Jin. 2022. "High-Performance InGaAs HEMTs on Si Substrates for RF Applications" Electronics 11, no. 2: 259. https://doi.org/10.3390/electronics11020259

Wang, B., Wang, Y., Feng, R., Wei, H., Cao, S., Liu, T., Liu, X., Li, H., Ding, P., & Jin, Z. (2022). High-Performance InGaAs HEMTs on Si Substrates for RF Applications. Electronics, 11(2), 259. https://doi.org/10.3390/electronics11020259