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Journal: Electronics, 2022
Volume: 11
Number: 225

Article: Investigation of AlGaN Channel HEMTs on β-Ga2O3 Substrate for High-Power Electronics
Authors: by A. Revathy, C. S. Boopathi, Osamah Ibrahim Khalaf and Carlos Andrés Tavera Romero
Link: https://www.mdpi.com/2079-9292/11/2/225

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