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Journal: Electronics, 2022
Volume: 11
Number: 1972

Article: Design Space of GaN Vertical Trench Junction Barrier Schottky Diodes: Comprehensive Study and Analytical Modeling
Authors: by Jian Yin, Sihao Chen, Hang Chen, Shuti Li, Houqiang Fu and Chao Liu
Link: https://www.mdpi.com/2079-9292/11/13/1972

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