Li, Z.; Elash, C.J.; Jin, C.; Chen, L.; Xing, J.; Yang, Z.; Shi, S.
Comparison of Total Ionizing Dose Effects in 22-nm and 28-nm FD SOI Technologies. Electronics 2022, 11, 1757.
https://doi.org/10.3390/electronics11111757
AMA Style
Li Z, Elash CJ, Jin C, Chen L, Xing J, Yang Z, Shi S.
Comparison of Total Ionizing Dose Effects in 22-nm and 28-nm FD SOI Technologies. Electronics. 2022; 11(11):1757.
https://doi.org/10.3390/electronics11111757
Chicago/Turabian Style
Li, Zongru, Christopher Jarrett Elash, Chen Jin, Li Chen, Jiesi Xing, Zhiwu Yang, and Shuting Shi.
2022. "Comparison of Total Ionizing Dose Effects in 22-nm and 28-nm FD SOI Technologies" Electronics 11, no. 11: 1757.
https://doi.org/10.3390/electronics11111757
APA Style
Li, Z., Elash, C. J., Jin, C., Chen, L., Xing, J., Yang, Z., & Shi, S.
(2022). Comparison of Total Ionizing Dose Effects in 22-nm and 28-nm FD SOI Technologies. Electronics, 11(11), 1757.
https://doi.org/10.3390/electronics11111757