Article Versions Notes

Sun Y, Kang X, Deng S, Zheng Y, Wei K, Xu L, Wu H, Liu X. First Demonstration of L-Band High-Power Limiter with GaN Schottky Barrier Diodes (SBDs) Based on Steep-Mesa Technology. Electronics. 2021; 10(4):433. https://doi.org/10.3390/electronics10040433

Sun, Yue, Xuanwu Kang, Shixiong Deng, Yingkui Zheng, Ke Wei, Linwang Xu, Hao Wu, and Xinyu Liu. 2021. "First Demonstration of L-Band High-Power Limiter with GaN Schottky Barrier Diodes (SBDs) Based on Steep-Mesa Technology" Electronics 10, no. 4: 433. https://doi.org/10.3390/electronics10040433

Sun, Y., Kang, X., Deng, S., Zheng, Y., Wei, K., Xu, L., Wu, H., & Liu, X. (2021). First Demonstration of L-Band High-Power Limiter with GaN Schottky Barrier Diodes (SBDs) Based on Steep-Mesa Technology. Electronics, 10(4), 433. https://doi.org/10.3390/electronics10040433