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J. Low Power Electron. Appl. 2017, 7(2), 9;

High Performance Receiver Design for RX Carrier Aggregation

Department of Electronic Engineering, Hanbat National University, Daejeon 305-719, Korea
Qualcomm Technologies, San Diego, CA 92121, USA
Wavepia Corporation, Osan-si 18110, Korea
Author to whom correspondence should be addressed.
Academic Editors: Minsu Choi and Yong-Bin Kim
Received: 27 March 2017 / Revised: 26 April 2017 / Accepted: 27 April 2017 / Published: 1 May 2017
(This article belongs to the Special Issue Selected Papers from IEEE ISOCC Conference 2016)
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Carrier aggregation is one of the key features to increase the data rate given a scarce bandwidth spectrum. This paper describes the design of a high performance receiver suitable for carrier aggregation in LTE-Advanced and future 5 G standards. The proposed architecture is versatile to support legacy mode (single carrier), inter-band carrier aggregation, and intra-band carrier aggregation. Performance with carrier-aggregation support is as good as legacy receivers. Contradicting requirements of high linearity and the low noise is satisfied with the single-gm receiver architecture in addition to supporting carrier aggregation. The proposed cascode-shutoff low-noise trans-conductance amplifier (LNTA) achieves 57.1 dB voltage gain, 1.76 dB NF (noise figure) , and - 6 . 7 dBm IIP3 (Third-order intercept point) with the power consumption of 21.3 mW in the intra-band carrier aggregation scenario. With legacy mode, the same receiver signal path achieves 56.6 dB voltage gain, 1.33 dB NF, and - 6 . 2 dBm IIP3 with a low power consumption of 7.4 mW. View Full-Text
Keywords: low noise amplifier (LNA); carrier aggregation; LTE-advanced; single-input multi-output (SIMO); multi-input multi-output (MIMO); multi-band low noise amplifier (LNA); carrier aggregation; LTE-advanced; single-input multi-output (SIMO); multi-input multi-output (MIMO); multi-band

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Kim, J.; Ku, B.-H.; Lee, S.; Kim, S.; Ryu, K. High Performance Receiver Design for RX Carrier Aggregation. J. Low Power Electron. Appl. 2017, 7, 9.

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J. Low Power Electron. Appl. EISSN 2079-9268 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
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