Influence of the Growth Ambience on the Localized Phase Separation and Electrical Conductivity in SrRuO3 Oxide Films
Abstract
:1. Introduction
2. Experiment
3. Results and Discussion
3.1. SEM
3.2. TEM
3.3. AFM and C-AFM
4. Conclusions
Supplementary Materials
Funding
Acknowledgments
Conflicts of Interest
References
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Sample | A | B | C | D |
---|---|---|---|---|
Oxygen pressure (Torr) | 10−1 | 10−4 | 10−6 | 10−7 |
d-spacing of (110) (Å) | 3.928 | 3.947 | 3.959 | 3.963 |
Secondary domain d (Å) | – | – | 3.987 | 4.076 |
FWHM (Degree) | 0.0741 | 0.2725 | 0.3190 | 0.4045 |
Resistivity (μΩ-cm) | 224 | 600 | 4380 | 61,440 |
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Cheng, H.-M. Influence of the Growth Ambience on the Localized Phase Separation and Electrical Conductivity in SrRuO3 Oxide Films. Coatings 2019, 9, 589. https://doi.org/10.3390/coatings9090589
Cheng H-M. Influence of the Growth Ambience on the Localized Phase Separation and Electrical Conductivity in SrRuO3 Oxide Films. Coatings. 2019; 9(9):589. https://doi.org/10.3390/coatings9090589
Chicago/Turabian StyleCheng, Hsin-Ming. 2019. "Influence of the Growth Ambience on the Localized Phase Separation and Electrical Conductivity in SrRuO3 Oxide Films" Coatings 9, no. 9: 589. https://doi.org/10.3390/coatings9090589