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Double-Gate Two-Step Source/Drain Poly-Si Thin-Film Transistor

Department of Electronic Engineering, Feng Chia University, Taichung 407, Taiwan
Department of Electronic Engineering, Chang Gung University, Taoyuan 33302, Taiwan
Department of Electrical Engineering, National Central University, Jhongli 320, Taiwan
Author to whom correspondence should be addressed.
Coatings 2019, 9(4), 233;
Received: 13 March 2019 / Revised: 31 March 2019 / Accepted: 1 April 2019 / Published: 3 April 2019
(This article belongs to the Special Issue Semiconductor Thin Films)
PDF [4330 KB, uploaded 3 April 2019]


A current improved and electric field reduced double-gate (DG) polycrystalline silicon thin-film transistor with two-step source/drain (DGTSD-TFT) design is proposed and demonstrated in this study. The two-step source/drain (TSD) design, which consists of a raised source/drain (RSD) area together with a partial gate overlapped lightly doped drain (P-GOLDD) structure, can lower the device drain electric field (DEF) to reveal a better device performance. Comparisons have been made with respect to a traditional single top gate (STG) device. The operation current of the proposed DGTSD-TFT is almost twice as large as that of the STG structure. The OFF-state leakage current and kink effect, as well as the ON/OFF current ratio for this double-gate and two-step source/drain structure, are also improved simultaneously because of a reduced DEF. A hot carrier stress test reveals that that two-step source/drain structure can achieve more stable device characteristics than the traditional device. View Full-Text
Keywords: thin-film transistor (TFT); polycrystalline silicon (poly-Si); kink effect; two-step source/drain (TSD); double gate (DG) thin-film transistor (TFT); polycrystalline silicon (poly-Si); kink effect; two-step source/drain (TSD); double gate (DG)

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Chien, F.-T.; Hung, C.-P.; Chiu, H.-C.; Kang, T.-K.; Cheng, C.-H.; Tsai, Y.-T. Double-Gate Two-Step Source/Drain Poly-Si Thin-Film Transistor. Coatings 2019, 9, 233.

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