Double-Gate Two-Step Source/Drain Poly-Si Thin-Film Transistor
AbstractA current improved and electric field reduced double-gate (DG) polycrystalline silicon thin-film transistor with two-step source/drain (DGTSD-TFT) design is proposed and demonstrated in this study. The two-step source/drain (TSD) design, which consists of a raised source/drain (RSD) area together with a partial gate overlapped lightly doped drain (P-GOLDD) structure, can lower the device drain electric field (DEF) to reveal a better device performance. Comparisons have been made with respect to a traditional single top gate (STG) device. The operation current of the proposed DGTSD-TFT is almost twice as large as that of the STG structure. The OFF-state leakage current and kink effect, as well as the ON/OFF current ratio for this double-gate and two-step source/drain structure, are also improved simultaneously because of a reduced DEF. A hot carrier stress test reveals that that two-step source/drain structure can achieve more stable device characteristics than the traditional device. View Full-Text
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Chien, F.-T.; Hung, C.-P.; Chiu, H.-C.; Kang, T.-K.; Cheng, C.-H.; Tsai, Y.-T. Double-Gate Two-Step Source/Drain Poly-Si Thin-Film Transistor. Coatings 2019, 9, 233.
Chien F-T, Hung C-P, Chiu H-C, Kang T-K, Cheng C-H, Tsai Y-T. Double-Gate Two-Step Source/Drain Poly-Si Thin-Film Transistor. Coatings. 2019; 9(4):233.Chicago/Turabian Style
Chien, Feng-Tso; Hung, Chih-Ping; Chiu, Hsien-Chin; Kang, Tsung-Kuei; Cheng, Ching-Hwa; Tsai, Yao-Tsung. 2019. "Double-Gate Two-Step Source/Drain Poly-Si Thin-Film Transistor." Coatings 9, no. 4: 233.
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