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Open AccessArticle

Effect of Oxygen Vacancy Ratio on a GaZTO Solar-Blind Photodetector

1
Institute of Microelectronics & Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan
2
SungShine Optelectronics Co., Ltd., Shenzhen 518067, China
*
Author to whom correspondence should be addressed.
Coatings 2018, 8(9), 293; https://doi.org/10.3390/coatings8090293
Received: 20 June 2018 / Revised: 3 August 2018 / Accepted: 20 August 2018 / Published: 21 August 2018
(This article belongs to the Special Issue Thin Films for Electronic Applications)
A gallium-zinc-tin-oxide (GaZTO) solar-blind photodetector was fabricated via radio frequency sputtering. The transmittance of the GaZTO thin film was >80% in the visible light region, and its energy bandgap ranged from 4.11 to 4.23 eV. Manipulating the oxygen flows changed the ratio of oxygen vacancies, which was confirmed by X-ray photoelectron spectroscopy. The ratio of oxygen vacancies in the GaZTO thin films impacted the performance of the photodetectors. The photocurrent, responsivity, and ultraviolet–visible rejection ratio of the GaZTO solar-blind photodetector were 1.23 × 10−6 A, 9.12 × 10−2 A/W, and 3.48 × 104, respectively, at a 10 V bias under 280 nm light illumination. The transient responses of the synthesized photodetectors were measured and discussed. View Full-Text
Keywords: GaZTO; RF-sputter; solar-blind photodetector GaZTO; RF-sputter; solar-blind photodetector
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Syu, J.-C.; Hsu, M.-H.; Chang, S.-P.; Chang, S.-J.; Lu, L. Effect of Oxygen Vacancy Ratio on a GaZTO Solar-Blind Photodetector. Coatings 2018, 8, 293.

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