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Open AccessArticle

Effect of Oxygen Vacancy Ratio on a GaZTO Solar-Blind Photodetector

Institute of Microelectronics & Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan
SungShine Optelectronics Co., Ltd., Shenzhen 518067, China
Author to whom correspondence should be addressed.
Coatings 2018, 8(9), 293;
Received: 20 June 2018 / Revised: 3 August 2018 / Accepted: 20 August 2018 / Published: 21 August 2018
(This article belongs to the Special Issue Thin Films for Electronic Applications)
PDF [1911 KB, uploaded 21 August 2018]


A gallium-zinc-tin-oxide (GaZTO) solar-blind photodetector was fabricated via radio frequency sputtering. The transmittance of the GaZTO thin film was >80% in the visible light region, and its energy bandgap ranged from 4.11 to 4.23 eV. Manipulating the oxygen flows changed the ratio of oxygen vacancies, which was confirmed by X-ray photoelectron spectroscopy. The ratio of oxygen vacancies in the GaZTO thin films impacted the performance of the photodetectors. The photocurrent, responsivity, and ultraviolet–visible rejection ratio of the GaZTO solar-blind photodetector were 1.23 × 10−6 A, 9.12 × 10−2 A/W, and 3.48 × 104, respectively, at a 10 V bias under 280 nm light illumination. The transient responses of the synthesized photodetectors were measured and discussed. View Full-Text
Keywords: GaZTO; RF-sputter; solar-blind photodetector GaZTO; RF-sputter; solar-blind photodetector

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Syu, J.-C.; Hsu, M.-H.; Chang, S.-P.; Chang, S.-J.; Lu, L. Effect of Oxygen Vacancy Ratio on a GaZTO Solar-Blind Photodetector. Coatings 2018, 8, 293.

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