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Open AccessFeature PaperArticle

A Ladder-Type Organosilicate Copolymer Gate Dielectric Materials for Organic Thin-Film Transistors

Department of Chemical and Biomolecular Engineering, Sogang University, Seoul 04107, Korea
Author to whom correspondence should be addressed.
Coatings 2018, 8(7), 236;
Received: 31 May 2018 / Revised: 27 June 2018 / Accepted: 2 July 2018 / Published: 3 July 2018
PDF [2445 KB, uploaded 3 July 2018]


A ladder-type organosilicate copolymer based on trimethoxymethylsilane (MTMS) and 1,2-bis(triethoxysilyl)alkane (BTESn: n = 2–4) were synthesized for use as gate dielectrics in organic thin-film transistors (OTFTs). For the BTESn, the number of carbon chains (2–4) was varied to elucidate the relationship between the chemical structure of the monomer and the resulting dielectric properties. The developed copolymer films require a low curing temperature (≈150 °C) and exhibit good insulating properties (leakage current density of ≈10−8–10−7 A·cm−2 at 1 MV·cm−1). Copolymer films were employed as dielectric materials for use in top-contact/bottom-gate organic thin-film transistors and the resulting devices exhibited decent electrical performance for both p- and n-channel organic semiconductors with mobility as high as 0.15 cm2·V−1·s−1 and an Ion/Ioff of >105. Furthermore, dielectric films were used for the fabrication of TFTs on flexible substrates. View Full-Text
Keywords: organic thin-film transistors; dielectric; organosilicate; copolymer organic thin-film transistors; dielectric; organosilicate; copolymer

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Kim, D.; Kim, C. A Ladder-Type Organosilicate Copolymer Gate Dielectric Materials for Organic Thin-Film Transistors. Coatings 2018, 8, 236.

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