Next Article in Journal
Catalytic Performance of Ag2O and Ag Doped CeO2 Prepared by Atomic Layer Deposition for Diesel Soot Oxidation
Next Article in Special Issue
Poly(Phenylene Methylene): A Multifunctional Material for Thermally Stable, Hydrophobic, Fluorescent, Corrosion-Protective Coatings
Previous Article in Journal
Alginate and Chitosan as a Functional Barrier for Paper-Based Packaging Materials
Previous Article in Special Issue
The Potential of Functionalized Ceramic Particles in Coatings for Improved Scratch Resistance
Open AccessFeature PaperArticle

A Ladder-Type Organosilicate Copolymer Gate Dielectric Materials for Organic Thin-Film Transistors

Department of Chemical and Biomolecular Engineering, Sogang University, Seoul 04107, Korea
*
Author to whom correspondence should be addressed.
Coatings 2018, 8(7), 236; https://doi.org/10.3390/coatings8070236
Received: 31 May 2018 / Revised: 27 June 2018 / Accepted: 2 July 2018 / Published: 3 July 2018
  |  
PDF [2445 KB, uploaded 3 July 2018]
  |  

Abstract

A ladder-type organosilicate copolymer based on trimethoxymethylsilane (MTMS) and 1,2-bis(triethoxysilyl)alkane (BTESn: n = 2–4) were synthesized for use as gate dielectrics in organic thin-film transistors (OTFTs). For the BTESn, the number of carbon chains (2–4) was varied to elucidate the relationship between the chemical structure of the monomer and the resulting dielectric properties. The developed copolymer films require a low curing temperature (≈150 °C) and exhibit good insulating properties (leakage current density of ≈10−8–10−7 A·cm−2 at 1 MV·cm−1). Copolymer films were employed as dielectric materials for use in top-contact/bottom-gate organic thin-film transistors and the resulting devices exhibited decent electrical performance for both p- and n-channel organic semiconductors with mobility as high as 0.15 cm2·V−1·s−1 and an Ion/Ioff of >105. Furthermore, dielectric films were used for the fabrication of TFTs on flexible substrates. View Full-Text
Keywords: organic thin-film transistors; dielectric; organosilicate; copolymer organic thin-film transistors; dielectric; organosilicate; copolymer
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

Supplementary material

SciFeed

Share & Cite This Article

MDPI and ACS Style

Kim, D.; Kim, C. A Ladder-Type Organosilicate Copolymer Gate Dielectric Materials for Organic Thin-Film Transistors. Coatings 2018, 8, 236.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Coatings EISSN 2079-6412 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top