Transparent Amorphous Oxide Semiconductor as Excellent Thermoelectric Materials

Kim, Seohan; Kim, Doukyun; Byeon, Jayoung; Lim, Jaehong; Song, Jaeyong; Park, Sunhwa; Park, Chulhong; Song, Pungkeun

doi:10.3390/coatings8120462

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Transparent Amorphous Oxide Semiconductor as Excellent Thermoelectric Materials

by

Seohan Kim

¹,

Doukyun Kim

²,

Jayoung Byeon

¹,

Jaehong Lim

³,

Jaeyong Song

⁴,

Sunhwa Park

⁴,

Chulhong Park

^5,* and

Pungkeun Song

^1,*

¹

Department of Materials Science and Engineering, Pusan National University, Busan 46241, Korea

²

Department of Physics, Pusan National University, Busan 46241, Korea

³

Department of Electrochemisty, Korea Institute of Materials Science, Changwon 51508, Korea

⁴

Korea Research Institute of Standards and Science, Daejeon 34113, Korea

⁵

Department of Physics Education, Pusan National University, Busan 46241, Korea

^*

Authors to whom correspondence should be addressed.

Coatings 2018, 8(12), 462; https://doi.org/10.3390/coatings8120462

Submission received: 6 September 2018 / Revised: 3 December 2018 / Accepted: 12 December 2018 / Published: 13 December 2018

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Abstract

It is demonstrated that transparent amorphous oxide semiconductors (TAOS) can be excellent thermoelectric (TE) materials, since their thermal conductivity (κ) through a randomly disordered structure is quite low, while their electrical conductivity and carrier mobility (μ) are high, compared to crystalline semiconductors through the first-principles calculations and the various measurements for the amorphous In−Zn−O (a-IZO) thin film. The calculated phonon dispersion in a-IZO shows non-linear phonon instability, which can prevent the transport of phonon. The a-IZO was estimated to have poor κ and high electrical conductivity compared to crystalline In₂O₃:Sn (c-ITO). These properties show that the TAOS can be an excellent thin-film transparent TE material. It is suggested that the TAOS can be employed to mitigate the heating problem in transparent display devices.

Keywords: thermoelectric; first-principles calculation; transparent amorphous oxide semiconductor; time-domain thermal reflectance; thermal diffusivity

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MDPI and ACS Style

Kim, S.; Kim, D.; Byeon, J.; Lim, J.; Song, J.; Park, S.; Park, C.; Song, P. Transparent Amorphous Oxide Semiconductor as Excellent Thermoelectric Materials. Coatings 2018, 8, 462. https://doi.org/10.3390/coatings8120462

AMA Style

Kim S, Kim D, Byeon J, Lim J, Song J, Park S, Park C, Song P. Transparent Amorphous Oxide Semiconductor as Excellent Thermoelectric Materials. Coatings. 2018; 8(12):462. https://doi.org/10.3390/coatings8120462

Chicago/Turabian Style

Kim, Seohan, Doukyun Kim, Jayoung Byeon, Jaehong Lim, Jaeyong Song, Sunhwa Park, Chulhong Park, and Pungkeun Song. 2018. "Transparent Amorphous Oxide Semiconductor as Excellent Thermoelectric Materials" Coatings 8, no. 12: 462. https://doi.org/10.3390/coatings8120462

APA Style

Kim, S., Kim, D., Byeon, J., Lim, J., Song, J., Park, S., Park, C., & Song, P. (2018). Transparent Amorphous Oxide Semiconductor as Excellent Thermoelectric Materials. Coatings, 8(12), 462. https://doi.org/10.3390/coatings8120462

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Transparent Amorphous Oxide Semiconductor as Excellent Thermoelectric Materials

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