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Open AccessArticle

Photovoltaic Effect in Graphene/MoS2/Si Van der Waals Heterostructures

Suzhou University of Science and Technology, Suzhou 215011, China
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Author to whom correspondence should be addressed.
Academic Editors: Federico Cesano and Domenica Scarano
Coatings 2018, 8(1), 2; https://doi.org/10.3390/coatings8010002
Received: 16 October 2017 / Revised: 7 December 2017 / Accepted: 19 December 2017 / Published: 21 December 2017
This paper presents a study on the photovoltaic effect of a graphene/MoS2/Si double heterostructure, grown by rapid chemical vapor deposition. It was found that the double junctions of the graphene/MoS2 Schottky junction and the MoS2/Si heterostructure played important roles in enhancing the device’s performance. They allowed more electron-hole pairs to be efficiently generated, separated, and collected in the graphene/MoS2/Si double interface. The device demonstrated an open circuit voltage of 0.51 V and an energy conversion efficiency of 2.58% under an optical illumination of 500 mW/cm2. The photovoltaic effect of the device was partly attributed to the strong light absorption and photoresponse of the few-layer MoS2 film, and partly ascribed to the high carrier-collection-rate of the double van der Waals heterostructures (vdWHs) in the device. View Full-Text
Keywords: graphene/MoS2/Si heterostructure; chemical vapor deposition; energy conversion efficiency; photoresponse graphene/MoS2/Si heterostructure; chemical vapor deposition; energy conversion efficiency; photoresponse
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Shi, W.; Ma, X. Photovoltaic Effect in Graphene/MoS2/Si Van der Waals Heterostructures. Coatings 2018, 8, 2.

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