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Open AccessArticle

Contamination-Free Graphene Transfer from Cu-Foil and Cu-Thin-Film/Sapphire

by 1,2, 1 and 1,2,*
Department of Materials Science and Engineering, Ajou University, Suwon 16499, Korea
Department of Energy Systems Research, Ajou University, Suwon 16499, Korea
Author to whom correspondence should be addressed.
Academic Editors: Federico Cesano and Domenica Scarano
Coatings 2017, 7(12), 218;
Received: 7 November 2017 / Revised: 24 November 2017 / Accepted: 27 November 2017 / Published: 2 December 2017
The separation of graphene grown on metallic catalyst by chemical vapor deposition (CVD) is essential for device applications. The transfer techniques of graphene from metallic catalyst to target substrate usually use the chemical etching method to dissolve the metallic catalyst. However, this causes not only high material cost but also environmental contamination in large-scale fabrication. We report a bubble transfer method to transfer graphene films to arbitrary substrate, which is nondestructive to both the graphene and the metallic catalyst. In addition, we report a type of metallic catalyst, which is 700 nm of Cu on sapphire substrate, which is hard enough to endure against any procedure in graphene growth and transfer. With the Cr adhesion layer between sapphire and Cu film, electrochemically delaminated graphene shows great quality during several growth cycles. The electrochemical bubble transfer method can offer high cost efficiency, little contamination and environmental advantages. View Full-Text
Keywords: graphene; bubble transfer; electrochemical delamination; Cu film; nondestructive; reusability graphene; bubble transfer; electrochemical delamination; Cu film; nondestructive; reusability
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Lee, J.; Lee, S.; Yu, H.K. Contamination-Free Graphene Transfer from Cu-Foil and Cu-Thin-Film/Sapphire. Coatings 2017, 7, 218.

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