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Improvement of Power Factor of CoSb3 Thermoelectric Thin Films via Microstructure Optimization

Institute of Thin Film Physics and Applications, Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Energy, Shenzhen University, Shenzhen 518060, China
Laboratory of Glasses and Ceramics, Institute of Chemical Science UMR CNRS 6226, University of Rennes 1, 35042 Rennes, France
Authors to whom correspondence should be addressed.
Academic Editor: Filippo Berto
Coatings 2017, 7(11), 205;
Received: 31 October 2017 / Revised: 15 November 2017 / Accepted: 16 November 2017 / Published: 18 November 2017
PDF [5052 KB, uploaded 18 November 2017]


Skutterudite CoSb3 has emerged as one of the most studied candidate materials for thermoelectric applications. In this work, CoSb3 thin films were prepared by radio frequency sputtering, and their microstructure was investigated with emphasis on the effect of target composition and deposition temperature. The goal was to enhance the thermoelectric properties of CoSb3 thin films via microstructure optimization. Results showed that the Sb content of films gradually decreased with increasing deposition temperature. Although the thin films prepared by the target with a Co and Sb element ratio of 1:3.5 approached the ideal stoichiometric ratio, they showed poor thermoelectric properties due to the formation of an additional Sb phase. By contrast, the thin films obtained with insufficient Sb showed a single CoSb3 phase and good thermoelectric properties. The mechanism behind this difference was studied accordingly. The power factor of the thin films was enhanced due to their dense structure and good crystallization. View Full-Text
Keywords: films; structure; thermoelectric properties films; structure; thermoelectric properties

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Zheng, Z.; Wei, M.; Li, F.; Luo, J.; Liang, G.; Ma, H.; Zhang, X.; Fan, P. Improvement of Power Factor of CoSb3 Thermoelectric Thin Films via Microstructure Optimization. Coatings 2017, 7, 205.

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