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Article

Towards Quantitative Interpretation of Fourier-Transform Photocurrent Spectroscopy on Thin-Film Solar Cells

1
Centre for Advanced Photovoltaics, Faculty of Electrical Engineering, Czech Technical University in Prague, Technická 2, 16627 Prague, Czech Republic
2
Institute of Physics, Czech Academy of Sciences, Cukrovarnická 10, 16200 Prague, Czech Republic
3
Deutsches Elektronen-Synchrotron DESY, Notkestr. 85, 22607 Hamburg, Germany
4
Photovoltaic and Thin-Film Electronics Laboratory, Institute of Microengineering (IMT), École Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, 2002 Neuchâtel, Switzerland
*
Author to whom correspondence should be addressed.
Coatings 2020, 10(9), 820; https://doi.org/10.3390/coatings10090820
Received: 30 June 2020 / Revised: 13 August 2020 / Accepted: 17 August 2020 / Published: 25 August 2020
(This article belongs to the Special Issue Advances in Thin Films for Photovoltaic Applications)
The method of detecting deep defects in photovoltaic materials by Fourier-Transform Photocurrent Spectroscopy has gone through continuous development during the last two decades. Still, giving quantitative predictions of photovoltaic device performance is a challenging task. As new materials appear, a prediction of potentially achievable open-circuit voltage with respect to bandgap is highly desirable. From thermodynamics, a prediction can be made based on the radiative limit, neglecting non-radiative recombination and carrier transport effects. Beyond this, more accurate analysis has to be done. First, the absolute defect density has to be calculated, taking into account optical effects, such as absorption enhancement, due to scattering. Secondly, the electrical effect of thickness variation has to be addressed. We analyzed a series of state-of-the-art hydrogenated amorphous silicon solar cells of different thicknesses at different states of light soaking degradation. Based on a combination of empirical results with optical, electrical and thermodynamic simulations, we provide a predictive model of the open-circuit voltage of a device with a given defect density and absorber thickness. We observed that, rather than the defect density or thickness alone, it is their product or the total number of defects, that matters. Alternatively, including defect absorption into the thermodynamic radiative limit gives close upper bounds to the open-circuit voltage with the advantage of a much easier evaluation. View Full-Text
Keywords: solar cells; photocurrent spectroscopy; defect density; amorphous silicon; open-circuit voltage; radiative limit solar cells; photocurrent spectroscopy; defect density; amorphous silicon; open-circuit voltage; radiative limit
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MDPI and ACS Style

Holovský, J.; Stuckelberger, M.; Finsterle, T.; Conrad, B.; Peter Amalathas, A.; Müller, M.; Haug, F.-J. Towards Quantitative Interpretation of Fourier-Transform Photocurrent Spectroscopy on Thin-Film Solar Cells. Coatings 2020, 10, 820. https://doi.org/10.3390/coatings10090820

AMA Style

Holovský J, Stuckelberger M, Finsterle T, Conrad B, Peter Amalathas A, Müller M, Haug F-J. Towards Quantitative Interpretation of Fourier-Transform Photocurrent Spectroscopy on Thin-Film Solar Cells. Coatings. 2020; 10(9):820. https://doi.org/10.3390/coatings10090820

Chicago/Turabian Style

Holovský, Jakub; Stuckelberger, Michael; Finsterle, Tomáš; Conrad, Brianna; Peter Amalathas, Amalraj; Müller, Martin; Haug, Franz-Josef. 2020. "Towards Quantitative Interpretation of Fourier-Transform Photocurrent Spectroscopy on Thin-Film Solar Cells" Coatings 10, no. 9: 820. https://doi.org/10.3390/coatings10090820

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