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Journal: Coatings, 2020
Volume: 10
Number: 278

Article: TCAD Simulation of the Doping-Less TFET with Ge/SiGe/Si Hetero-Junction and Hetero-Gate Dielectric for the Enhancement of Device Performance
Authors: by Tao Han, Hongxia Liu, Shupeng Chen, Shulong Wang and Haiwu Xie
Link: https://www.mdpi.com/2079-6412/10/3/278

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