Han, T.; Liu, H.; Chen, S.; Wang, S.; Xie, H.
TCAD Simulation of the Doping-Less TFET with Ge/SiGe/Si Hetero-Junction and Hetero-Gate Dielectric for the Enhancement of Device Performance. Coatings 2020, 10, 278.
https://doi.org/10.3390/coatings10030278
AMA Style
Han T, Liu H, Chen S, Wang S, Xie H.
TCAD Simulation of the Doping-Less TFET with Ge/SiGe/Si Hetero-Junction and Hetero-Gate Dielectric for the Enhancement of Device Performance. Coatings. 2020; 10(3):278.
https://doi.org/10.3390/coatings10030278
Chicago/Turabian Style
Han, Tao, Hongxia Liu, Shupeng Chen, Shulong Wang, and Haiwu Xie.
2020. "TCAD Simulation of the Doping-Less TFET with Ge/SiGe/Si Hetero-Junction and Hetero-Gate Dielectric for the Enhancement of Device Performance" Coatings 10, no. 3: 278.
https://doi.org/10.3390/coatings10030278
APA Style
Han, T., Liu, H., Chen, S., Wang, S., & Xie, H.
(2020). TCAD Simulation of the Doping-Less TFET with Ge/SiGe/Si Hetero-Junction and Hetero-Gate Dielectric for the Enhancement of Device Performance. Coatings, 10(3), 278.
https://doi.org/10.3390/coatings10030278