Synthesis of Nitrogen-Doped Graphene on Copper Nanowires for Efficient Thermal Conductivity and Stability by Using Conventional Thermal Chemical Vapor Deposition

Park, Minjeong; Ahn, Seul-Ki; Hwang, Sookhyun; Park, Seongjun; Kim, Seonpil; Jeon, Minhyon

doi:10.3390/nano9070984

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Synthesis of Nitrogen-Doped Graphene on Copper Nanowires for Efficient Thermal Conductivity and Stability by Using Conventional Thermal Chemical Vapor Deposition

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Department of Nanoscience and Engineering, Center for Nano Manufacturing, Inje University, Gimhae 50834, Korea

Department of Military Information Science, Gyeongju University, Gyeongju 38065, Korea

Author to whom correspondence should be addressed.

Nanomaterials 2019, 9(7), 984; https://doi.org/10.3390/nano9070984

Received: 11 June 2019 / Revised: 1 July 2019 / Accepted: 2 July 2019 / Published: 7 July 2019

(This article belongs to the Special Issue Graphene-Based Nanostructures and Optoelectronic Applications)

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Abstract

Cu nanowires (NWs) possess remarkable potential a slow-cost heat transfer material in modern electronic devices. However, Cu NWs with high aspect ratios undergo surface oxidation, resulting in performance degradation. A growth temperature of approximately <1000 °C is required for preventing the changing of Cu NW morphology by the melting of Cu NWs at over 1000 °C. In addition, nitrogen (N)-doped carbon materials coated on Cu NWs need the formation hindrance of oxides and high thermal conductivity of Cu NWs. Therefore, we investigated the N-doped graphene-coated Cu NWs (NG/Cu NWs) to enhance both the thermal conductivity and oxidation stability of Cu NWs. The Cu NWs were synthesized through an aqueous method, and ethylenediamine with an amine group induced the isotropic growth of Cu to produce Cu NWs. At that time, the amine group could be used as a growth source for the N-doped graphene on Cu NWs. To grow an N-doped graphene without changing the morphology of Cu NWs, we report a double-zone growth process at a low growth temperature of approximately 600 °C. Thermal-interface material measurements were conducted on the NG/Cu NWs to confirm their applicability as heat transfer materials. Our results show that the synthesis technology of N-doped graphene on Cu NWs could promote future research and applications of thermal interface materials in air-stable flexible electronic devices. View Full-Text

Keywords: copper nanowires; N-doped graphene; chemical vapor deposition; growth; double-zone growth process; thermal interface materials

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MDPI and ACS Style

Park, M.; Ahn, S.-K.; Hwang, S.; Park, S.; Kim, S.; Jeon, M. Synthesis of Nitrogen-Doped Graphene on Copper Nanowires for Efficient Thermal Conductivity and Stability by Using Conventional Thermal Chemical Vapor Deposition. Nanomaterials 2019, 9, 984. https://doi.org/10.3390/nano9070984

AMA Style

Park M, Ahn S-K, Hwang S, Park S, Kim S, Jeon M. Synthesis of Nitrogen-Doped Graphene on Copper Nanowires for Efficient Thermal Conductivity and Stability by Using Conventional Thermal Chemical Vapor Deposition. Nanomaterials. 2019; 9(7):984. https://doi.org/10.3390/nano9070984

Chicago/Turabian Style

Park, Minjeong, Seul-Ki Ahn, Sookhyun Hwang, Seongjun Park, Seonpil Kim, and Minhyon Jeon. 2019. "Synthesis of Nitrogen-Doped Graphene on Copper Nanowires for Efficient Thermal Conductivity and Stability by Using Conventional Thermal Chemical Vapor Deposition" Nanomaterials 9, no. 7: 984. https://doi.org/10.3390/nano9070984

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Synthesis of Nitrogen-Doped Graphene on Copper Nanowires for Efficient Thermal Conductivity and Stability by Using Conventional Thermal Chemical Vapor Deposition

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