Low-Power Graphene/ZnO Schottky UV Photodiodes with Enhanced Lateral Schottky Barrier Homogeneity
Abstract
:1. Introduction
2. Experimental Section
2.1. Preparation of SLG/SiO2/Si Substrate
2.2. Fabrication of ZnO/SLG Schottky PDs
2.3. Measurements of Material and Device Characteristics
3. Results and Discussion
4. Summary and Conclusions
Supplementary Materials
Author Contributions
Funding
Conflicts of Interest
References
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Materials and Structures | λUV (nm) | VB (V) | τr (s) | τd (s) | G | R | IPh/IDark | Ref. | |
---|---|---|---|---|---|---|---|---|---|
SLG/ZnO TF | AT | 365 | 0.1 | 0.41 | 0.31 | ≈347 | ≈101 | 1100 | This Work |
TC | 0.1 | 0.16 | 0.19 | ≈381 | ≈111 | 4200 | |||
MLG/ZnO NRs | 365 | −5 | 0.7 × 10−3 | 3.6 × 10−3 | 385 | 113 | <100 | [12] | |
SLG/AlZnO NRs | 380 | SP | 37 × 10−6 | 330 × 10−6 | - | 0.039 | [11] | ||
SLG/ZnO NRs | 325 | −1 | 0.3 | 0.5 | - | 21.26 | ≈30 | [13] | |
SLG/ZnO NRs | 325 | −2 | 0.52 | 3.4 | 1.92 | 4 | [14] | ||
rGO/ZnO NRs | N/A | 1 | 2.42 | 0.2 | ≈72 | ≈2.0 | >>103 | [15] | |
rGO/ZnO NRs | 365 | SP | 0.1 | 0.2 | 5 | [16] | |||
GQDs/ZnO NRs | 340 | −1 | [44] |
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Lee, Y.; Kim, D.Y.; Lee, S. Low-Power Graphene/ZnO Schottky UV Photodiodes with Enhanced Lateral Schottky Barrier Homogeneity. Nanomaterials 2019, 9, 799. https://doi.org/10.3390/nano9050799
Lee Y, Kim DY, Lee S. Low-Power Graphene/ZnO Schottky UV Photodiodes with Enhanced Lateral Schottky Barrier Homogeneity. Nanomaterials. 2019; 9(5):799. https://doi.org/10.3390/nano9050799
Chicago/Turabian StyleLee, Youngmin, Deuk Young Kim, and Sejoon Lee. 2019. "Low-Power Graphene/ZnO Schottky UV Photodiodes with Enhanced Lateral Schottky Barrier Homogeneity" Nanomaterials 9, no. 5: 799. https://doi.org/10.3390/nano9050799