Next Article in Journal
Hydrophobization of Tobacco Mosaic Virus to Control the Mineralization of Organic Templates
Next Article in Special Issue
Synthesis of Nitrogen-Doped Graphene on Copper Nanowires for Efficient Thermal Conductivity and Stability by Using Conventional Thermal Chemical Vapor Deposition
Previous Article in Journal
Interfacial Engineering of Graphene Nanosheets at MgO Particles for Thermal Conductivity Enhancement of Polymer Composites
Previous Article in Special Issue
Tunable Graphene-Based Plasmon-Induced Transparency Based on Edge Mode in the Mid-Infrared Region
Open AccessArticle

Low-Power Graphene/ZnO Schottky UV Photodiodes with Enhanced Lateral Schottky Barrier Homogeneity

1
Quantum-Functional Semiconductor Research Center, Dongguk University—Seoul, Seoul 04623, Korea
2
Department of Semiconductor Science, Dongguk University—Seoul, Seoul 04623, Korea
*
Author to whom correspondence should be addressed.
Nanomaterials 2019, 9(5), 799; https://doi.org/10.3390/nano9050799
Received: 19 April 2019 / Revised: 10 May 2019 / Accepted: 18 May 2019 / Published: 24 May 2019
(This article belongs to the Special Issue Graphene-Based Nanostructures and Optoelectronic Applications)
The low-power, high-performance graphene/ZnO Schottky photodiodes were demonstrated through the direct sputter-growth of ZnO onto the thermally-cleaned graphene/SiO2/Si substrate at room temperature. Prior to the growth of ZnO, a thermal treatment of the graphene surface was performed at 280 °C for 10 min in a vacuum to desorb chemical residues that may serve as trap sites at the interface between graphene and ZnO. The device clearly showed a rectifying behavior with the Schottky barrier of ≈0.61 eV and an ideality factor of 1.16. Under UV illumination, the device exhibited the excellent photoresponse characteristics in both forward and reverse bias regions. When illuminating UV light with the optical power density of 0.62 mW/cm2, the device revealed a high on/off current ratio of >103 even at a low bias voltage of 0.1 V. For the transient characteristics upon switching of UV light pulses, the device represented a fast and stable photoresponse (i.e., rise time: 0.16 s, decay time: 0.19 s). From the temperature-dependent current–voltage characteristics, such an outstanding photoresponse characteristic was found to arise from the enhanced Schottky barrier homogeneity via the thermal treatment of the graphene surface. The results suggest that the ZnO/graphene Schottky diode holds promise for the application in high-performance low-power UV photodetectors. View Full-Text
Keywords: graphene; zinc oxide; Schottky photodiode; Schottky barrier homogeneity graphene; zinc oxide; Schottky photodiode; Schottky barrier homogeneity
Show Figures

Graphical abstract

MDPI and ACS Style

Lee, Y.; Kim, D.Y.; Lee, S. Low-Power Graphene/ZnO Schottky UV Photodiodes with Enhanced Lateral Schottky Barrier Homogeneity. Nanomaterials 2019, 9, 799.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop