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Journal: Nanomaterials, 2019
Volume: 9
Number: 784
Article:
The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiOX as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide
Authors:
by
Joong-Hyun Park, Myung-Hun Shin and Jun-Sin Yi
Link:
https://www.mdpi.com/2079-4991/9/5/784
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