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Nanomaterials
Volume 9
Issue 5
10.3390/nano9050659
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Article

Graphene Schottky Junction on Pillar Patterned Silicon Substrate

by
Giuseppe Luongo
1,2,*,
Alessandro Grillo
1,
Filippo Giubileo
2,
Laura Iemmo
1,2,
Mindaugas Lukosius
3,
Carlos Alvarado Chavarin
3,
Christian Wenger
3,4 and
Antonio Di Bartolomeo
1,2,5,*
1
Physics Department “E. R. Caianiello”, University of Salerno, via Giovanni Paolo II n. 132, 84084 Fisciano, Italy
2
CNR-SPIN Salerno, via Giovanni Paolo II n. 132, 84084 Fisciano, Italy
3
IHP–Leibniz Institut fuer innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
4
Brandenburg Medical School Theodor Fontane, 16816 Neuruppin, Germany
5
Interdepartmental Centre NanoMates, University of Salerno, via Giovanni Paolo II n. 132, 84084 Fisciano, Italy
*
Authors to whom correspondence should be addressed.
Nanomaterials 2019, 9(5), 659; https://doi.org/10.3390/nano9050659
Received: 29 March 2019 / Revised: 19 April 2019 / Accepted: 22 April 2019 / Published: 26 April 2019
(This article belongs to the Special Issue 2D Materials and Van der Waals Heterostructures: Physics and Applications)
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Abstract

A graphene/silicon junction with rectifying behaviour and remarkable photo-response was fabricated by transferring a graphene monolayer on a pillar-patterned Si substrate. The device forms a 0.11 eV Schottky barrier with 2.6 ideality factor at room temperature and exhibits strongly bias- and temperature-dependent reverse current. Below room temperature, the reverse current grows exponentially with the applied voltage because the pillar-enhanced electric field lowers the Schottky barrier. Conversely, at higher temperatures, the charge carrier thermal generation is dominant and the reverse current becomes weakly bias-dependent. A quasi-saturated reverse current is similarly observed at room temperature when the charge carriers are photogenerated under light exposure. The device shows photovoltaic effect with 0.7% power conversion efficiency and achieves 88 A/W photoresponsivity when used as photodetector. View Full-Text
Keywords: graphene; Schottky barrier; diode; photodetector; heterojunction; MOS (Metal Oxide Semiconductor) capacitor; responsivity graphene; Schottky barrier; diode; photodetector; heterojunction; MOS (Metal Oxide Semiconductor) capacitor; responsivity
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MDPI and ACS Style

Luongo, G.; Grillo, A.; Giubileo, F.; Iemmo, L.; Lukosius, M.; Alvarado Chavarin, C.; Wenger, C.; Di Bartolomeo, A. Graphene Schottky Junction on Pillar Patterned Silicon Substrate. Nanomaterials 2019, 9, 659. https://doi.org/10.3390/nano9050659

AMA Style

Luongo G, Grillo A, Giubileo F, Iemmo L, Lukosius M, Alvarado Chavarin C, Wenger C, Di Bartolomeo A. Graphene Schottky Junction on Pillar Patterned Silicon Substrate. Nanomaterials. 2019; 9(5):659. https://doi.org/10.3390/nano9050659

Chicago/Turabian Style

Luongo, Giuseppe, Alessandro Grillo, Filippo Giubileo, Laura Iemmo, Mindaugas Lukosius, Carlos Alvarado Chavarin, Christian Wenger, and Antonio Di Bartolomeo. 2019. "Graphene Schottky Junction on Pillar Patterned Silicon Substrate" Nanomaterials 9, no. 5: 659. https://doi.org/10.3390/nano9050659

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