Comparison of Frictional Properties of CVD-Grown MoS2 and Graphene Films under Dry Sliding Conditions
AbstractIn the present study, dry friction and wear properties of atomically thin CVD-grown graphene and MoS2 films on SiO2/Si substrates were compared at low (72 MPa) and high (378 MPa) contact pressures. Analysis of atomic force microscopy images of these films verified that the MoS2 films, which were directly grown on the SiO2/Si substrates, had clean surfaces and made conformal contacts with the substrates. In contrast, the graphene film showed many contaminants on its surface and was loosely bonded with its SiO2/Si substrate due to its wet transfer from a Cu foil to the substrate. The MoS2 film exhibited friction and wear properties superior to those of the graphene film both at low and high contact pressures. We found that the clean sliding surface and strong bonding with SiO2/Si were the main causes of the superiority of the MoS2 film compared to the graphene film. Mild wear occurred in a layer-by-layer fashion at low contact pressure for the MoS2 film. At high contact pressure, severe wear occurred due to failure at the boundary between the MoS2 films and the underlying substrates. At both contact pressures, friction did not increase immediately after the removal of the MoS2 film from the SiO2/Si substrate because the film transferred onto the counter sliding surface and served as a lubricant. View Full-Text
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Cho, D.-H.; Jung, J.; Kim, C.; Lee, J.; Oh, S.-D.; Kim, K.-S.; Lee, C. Comparison of Frictional Properties of CVD-Grown MoS2 and Graphene Films under Dry Sliding Conditions. Nanomaterials 2019, 9, 293.
Cho D-H, Jung J, Kim C, Lee J, Oh S-D, Kim K-S, Lee C. Comparison of Frictional Properties of CVD-Grown MoS2 and Graphene Films under Dry Sliding Conditions. Nanomaterials. 2019; 9(2):293.Chicago/Turabian Style
Cho, Dae-Hyun; Jung, Jaehyuck; Kim, Chan; Lee, Jinhwan; Oh, Se-Doo; Kim, Kwang-Seop; Lee, Changgu. 2019. "Comparison of Frictional Properties of CVD-Grown MoS2 and Graphene Films under Dry Sliding Conditions." Nanomaterials 9, no. 2: 293.
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