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Open AccessArticle

Ferroelectric Diode Effect with Temperature Stability of Double Perovskite Bi2NiMnO6 Thin Films

School of Physics Optoelectric Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou 510006, China
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Nanomaterials 2019, 9(12), 1783; https://doi.org/10.3390/nano9121783
Received: 20 November 2019 / Revised: 5 December 2019 / Accepted: 10 December 2019 / Published: 15 December 2019
Double perovskite Bi2NiMnO6 (BNMO) thin films grown on p-Si (100) substrates with LaNiO3 (LNO) buffer layers were fabricated using chemical solution deposition. The crystal structure, surface topography, surface chemical state, ferroelectric, and current-voltage characteristics of BNMO thin films were investigated. The results show that the nanocrystalline BNMO thin films on p-Si substrates without and with LNO buffer layer are monoclinic phase, which have antiferroelectric-like properties. The composition and chemical state of BNMO thin films were characterized by X-ray photoelectron spectroscopy. In the whole electrical property testing process, when the BNMO/p-Si heterojunction changed into a BNMO/LNO/p-Si heterojunction, the diode behavior of a single diode changing into two tail to tail diodes was observed. The conduction mechanism and temperature stability were also discussed. View Full-Text
Keywords: Bi2NiMnO6; thin films; diode effect; oxygen defect; conduction mechanism Bi2NiMnO6; thin films; diode effect; oxygen defect; conduction mechanism
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Zhong, W.-M.; Liu, Q.-X.; Tang, X.-G.; Jiang, Y.-P.; Li, W.-H.; Li, W.-P.; Cheng, T.-D. Ferroelectric Diode Effect with Temperature Stability of Double Perovskite Bi2NiMnO6 Thin Films. Nanomaterials 2019, 9, 1783.

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