Liang, F.; Zhao, D.; Jiang, D.; Liu, Z.; Zhu, J.; Chen, P.; Yang, J.; Liu, S.; Xing, Y.; Zhang, L.;
et al. Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN. Nanomaterials 2018, 8, 744.
https://doi.org/10.3390/nano8090744
AMA Style
Liang F, Zhao D, Jiang D, Liu Z, Zhu J, Chen P, Yang J, Liu S, Xing Y, Zhang L,
et al. Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN. Nanomaterials. 2018; 8(9):744.
https://doi.org/10.3390/nano8090744
Chicago/Turabian Style
Liang, Feng, Degang Zhao, Desheng Jiang, Zongshun Liu, Jianjun Zhu, Ping Chen, Jing Yang, Shuangtao Liu, Yao Xing, Liqun Zhang,
and et al. 2018. "Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN" Nanomaterials 8, no. 9: 744.
https://doi.org/10.3390/nano8090744
APA Style
Liang, F., Zhao, D., Jiang, D., Liu, Z., Zhu, J., Chen, P., Yang, J., Liu, S., Xing, Y., Zhang, L., Li, M., Zhang, Y., & Du, G.
(2018). Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN. Nanomaterials, 8(9), 744.
https://doi.org/10.3390/nano8090744