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Nanomaterials 2018, 8(7), 491;

Effects of Different Oxidation Degrees of Graphene Oxide on P-Type and N-Type Si Heterojunction Photodetectors

Department of Opto-electronic Engineering, National Dong Hwa University, Hualien 97401, Taiwan
Author to whom correspondence should be addressed.
Received: 25 May 2017 / Revised: 29 June 2018 / Accepted: 2 July 2018 / Published: 4 July 2018
(This article belongs to the Special Issue Optoelectronic Nanodevices)
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Oxygen-containing functional groups in graphene oxide (GO), a derivative of graphene, can widen the bandgap of graphene. In this study, we varied the amount of hydrogen peroxide used to prepare GO samples with different degrees of oxidation. Transmittance measurement, Raman spectroscopy, and X-ray photoelectron spectroscopy were used to completely characterize the change in oxidation degree. The effects of oxidation degree on p-type and n-type Si heterojunction photodetectors were compared. Notably, GO with a lower oxidation degree led to a larger photoresponse of p-type Si, whereas that with a higher oxidation degree achieved a larger photoresponse of n-type Si. View Full-Text
Keywords: graphene oxide; oxidation; photodetector graphene oxide; oxidation; photodetector

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Shih, C.-K.; Ciou, Y.-T.; Chiu, C.-W.; Li, Y.-R.; Jheng, J.-S.; Chen, Y.-C.; Lin, C.-H. Effects of Different Oxidation Degrees of Graphene Oxide on P-Type and N-Type Si Heterojunction Photodetectors. Nanomaterials 2018, 8, 491.

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