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Nanomaterials 2018, 8(6), 397; https://doi.org/10.3390/nano8060397

Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation

1
Korea Basic Science Institute, 169-148, Gwahak-ro, Yuseong-gu, 34133 Daejeon, Korea
2
Quantum-Function Research Laboratory and Department of Physics, Hanyang University, 04763 Seoul, Korea
3
Department of Science Education, Jeonju University, 303 Cheonjam-ro, Wansan-gu, 55069 Jeollabuk-do, Korea
4
Analytical Laboratory of Advanced Ferroelectric Crystals, Jeonju University, 303 Cheonjam-ro, Wansan-gu, 55069 Jeollabuk-do, Korea
*
Authors to whom correspondence should be addressed.
Received: 9 May 2018 / Revised: 31 May 2018 / Accepted: 31 May 2018 / Published: 2 June 2018
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Abstract

We investigate the electrical characteristics of Schottky contacts for an Au/hydride vapor phase epitaxy (HVPE) a-plane GaN template grown via in situ GaN nanodot formation. Although the Schottky diodes present excellent rectifying characteristics, their Schottky barrier height and ideality factor are highly dependent upon temperature variation. The relationship between the barrier height, ideality factor, and conventional Richardson plot reveals that the Schottky diodes exhibit an inhomogeneous barrier height, attributed to the interface states between the metal and a-plane GaN film and to point defects within the a-plane GaN layers grown via in situ nanodot formation. Also, we confirm that the current transport mechanism of HVPE a-plane GaN Schottky diodes grown via in situ nanodot formation prefers a thermionic field emission model rather than a thermionic emission (TE) one, implying that Poole–Frenkel emission dominates the conduction mechanism over the entire range of measured temperatures. The deep-level transient spectroscopy (DLTS) results prove the presence of noninteracting point-defect-assisted tunneling, which plays an important role in the transport mechanism. These electrical characteristics indicate that this method possesses a great throughput advantage for various applications, compared with Schottky contact to a-plane GaN grown using other methods. We expect that HVPE a-plane GaN Schottky diodes supported by in situ nanodot formation will open further opportunities for the development of nonpolar GaN-based high-performance devices. View Full-Text
Keywords: nanodot; a-plane GaN; HVPE; Schottky diodes nanodot; a-plane GaN; HVPE; Schottky diodes
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Lee, M.; Vu, T.K.O.; Lee, K.S.; Kim, E.K.; Park, S. Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation. Nanomaterials 2018, 8, 397.

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