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Open AccessArticle

Bendable Single Crystal Silicon Nanomembrane Thin Film Transistors with Improved Low-Temperature Processed Metal/n-Si Ohmic Contact by Inserting TiO2 Interlayer

State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an 710071, China
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Author to whom correspondence should be addressed.
These authors contributed equally to this work.
Nanomaterials 2018, 8(12), 1060; https://doi.org/10.3390/nano8121060
Received: 21 November 2018 / Revised: 8 December 2018 / Accepted: 13 December 2018 / Published: 16 December 2018
(This article belongs to the Special Issue Silicon-Based Nanomaterials: Technology and Applications)
Bendable single crystal silicon nanomembrane thin film transistors (SiNMs TFTs), employing a simple method which can improve the metal/n-Silicon (Si) contact characteristics by inserting the titanium dioxide (TiO2) interlayer deposited by atomic layer deposition (ALD) at a low temperature (90 °C), are fabricated on ITO/PET flexible substrates. Current-voltage characteristics of titanium (Ti)/insertion layer (IL)/n-Si structures demonstrates that they are typically ohmic contacts. X-ray photoelectron spectroscopy (XPS) results determines that TiO2 is oxygen-vacancies rich, which may dope TiO2 and contribute to a lower resistance. By inserting TiO2 between Ti and n-Si, Ids of bendable single crystal SiNMs TFTs increases 3–10 times than those without the TiO2 insertion layer. The fabricated bendable devices show superior flexible properties. The TFTs, whose electrical properties keeps almost unchanged in 800 cycles bending with a bending radius of 0.75 cm, obtains the durability in bending test. All of the results confirm that it is a promising method to insert the TiO2 interlayer for improving the Metal/n-Si ohmic contact in fabrication of bendable single crystal SiNMs TFTs. View Full-Text
Keywords: thin film transistor; single-crystal Si nanomembrane (Si NMs); TiO2 insertion layer; ohmic contact thin film transistor; single-crystal Si nanomembrane (Si NMs); TiO2 insertion layer; ohmic contact
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MDPI and ACS Style

Zhang, J.; Zhang, Y.; Chen, D.; Zhu, W.; Xi, H.; Zhang, J.; Zhang, C.; Hao, Y. Bendable Single Crystal Silicon Nanomembrane Thin Film Transistors with Improved Low-Temperature Processed Metal/n-Si Ohmic Contact by Inserting TiO2 Interlayer. Nanomaterials 2018, 8, 1060. https://doi.org/10.3390/nano8121060

AMA Style

Zhang J, Zhang Y, Chen D, Zhu W, Xi H, Zhang J, Zhang C, Hao Y. Bendable Single Crystal Silicon Nanomembrane Thin Film Transistors with Improved Low-Temperature Processed Metal/n-Si Ohmic Contact by Inserting TiO2 Interlayer. Nanomaterials. 2018; 8(12):1060. https://doi.org/10.3390/nano8121060

Chicago/Turabian Style

Zhang, Jiaqi; Zhang, Yi; Chen, Dazheng; Zhu, Weidong; Xi, He; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue. 2018. "Bendable Single Crystal Silicon Nanomembrane Thin Film Transistors with Improved Low-Temperature Processed Metal/n-Si Ohmic Contact by Inserting TiO2 Interlayer" Nanomaterials 8, no. 12: 1060. https://doi.org/10.3390/nano8121060

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