Next Article in Journal
An Ab Initio Study of Pressure-Induced Reversal of Elastically Stiff and Soft Directions in YN and ScN and Its Effect in Nanocomposites Containing These Nitrides
Next Article in Special Issue
Temperature-Dependent Accommodation of Two Lattices of Largely Different Size during Growth
Previous Article in Journal
Retraction: Ajibade, P.A., et al. Synthesis, Optical and Structural Properties of Copper Sulfide Nanocrystals from Single Molecule Precursors. Nanomaterials 2017, 7, 32
Open AccessArticle

Fabrication of Si/graphene/Si Double Heterostructures by Semiconductor Wafer Bonding towards Future Applications in Optoelectronics

Department of Chemical Engineering, Kyoto University, Kyoto 615-8510, Japan
*
Author to whom correspondence should be addressed.
Nanomaterials 2018, 8(12), 1048; https://doi.org/10.3390/nano8121048
Received: 11 November 2018 / Revised: 4 December 2018 / Accepted: 12 December 2018 / Published: 14 December 2018
(This article belongs to the Special Issue Nanotechnologies and Nanomaterials: Selected Papers from CCMR 2019)
A Si/graphene/Si planar double heterostructure has been fabricated by means of semiconductor wafer bonding. The interfacial mechanical stability and interlayer electrical connection have been verified for the structure. To the best of our knowledge, this is the first realization of a monolayer-cored double heterostructure. In addition, a double heterostructure with bilayer graphene has been prepared for bandgap generation and tuning by application of a bias voltage. These structures move towards the realization of versatile graphene optoelectronics, such as an electrically pumped graphene laser. Our Si/graphene/Si double heterostructure is positioned to form a new basis for next-generation nanophotonic devices with high photon and carrier confinements, earth abundance (C, Si), environmental safety (C, Si), and excellent optical and electrical controllability by silicon clads. View Full-Text
Keywords: graphene; silicon; double heterostructure; wafer bonding; optoelectronics; nanophotonics graphene; silicon; double heterostructure; wafer bonding; optoelectronics; nanophotonics
Show Figures

Figure 1

MDPI and ACS Style

Naito, T.; Tanabe, K. Fabrication of Si/graphene/Si Double Heterostructures by Semiconductor Wafer Bonding towards Future Applications in Optoelectronics. Nanomaterials 2018, 8, 1048.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Search more from Scilit
 
Search
Back to TopTop