Overview of Phase-Change Electrical Probe Memory
Abstract
:1. Introduction
2. Storage Mechanisms Review of Phase-Change Electrical Probe Memory
3. Design Approaches Review of Phase-Change Electrical Probe Memory
3.1. Role of Probe Tip
3.2. Role of Capping Layer
3.3. Role of the Storage Layer
3.4. Role of the Bottom Layer
4. Current status of Phase-Change Electrical Probe Memory
4.1. Recent Progress on Phase-Change Electrical Probe Memory from Authors’ Group
4.2. Recent Progress on Phase-Change Electrical Probe Memory from Other Groups
5. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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Group | Storage Mechanism | Architecture | Bit Size (nm) | References |
---|---|---|---|---|
Kado | Electrical switch | GeSb2Te4 film Pt electrode | 10–70 | [16] |
Tanaka | Structural switch | Ge2Sb2Te5 film Pt electrode | 10–100 | [18,19] |
Pandian | Electrical & structural switch | Ge2Sb2Te5 film Mo electrode | ~100 | [20] |
Sun | Electrical & structural switch | Ge2Sb2Te5 film Cr electrode | 25–50 | [21] |
Maniva | Structural switch | GeTe6 film Ag electrode | 300–1000 | [22] |
Group | Architecture | Capping Property | GST Thickness (nm) | Bottom Property | Bit Image |
---|---|---|---|---|---|
Gidon | DLC/GST/DLC | σ: 10 Ω−1·m−1 L: 2 nm k: N/A | 10 | σ: 100 Ω−1·m−1 L: 10 nm k: N/A | |
Kim | TiN/GST/TiN | σ: N/A L: 100 nm k: N/A | 20 | σ: N/A L: 100 nm k: N/A | |
Bhaskaran | N2 doped DLC/GST/N2 doped DLC | σ: 166 Ω−1·m−1 L: 6 nm k: N/A | 20 | σ: 103 Ω−1·m−1 L: 120 nm k: N/A | |
Wright | DLC/GST/DLC | σ: 50 Ω−1·m−1 L: 30 nm k: 100·W·m−1·K−1 | 30 | σ: 100 Ω−1·m−1 L: 10 nm k:100 W·m−1·K−1 | |
Wang | TiN/GST/DLC | σ: 50 Ω−1·m−1 L: 10 nm k: 0.5 W·m−1·K−1 | 10 | σ: 5 × 106 Ω−1·m−1 L: 40 nm k: 12 W·m−1·K−1 | |
Wang | TiN/GST/TiN | σ: 2 × 105 Ω−1·m−1 L: 2 nm k: 12 W·m−1·K−1 | 2 | σ: 5 × 106 Ω−1·m−1 L: 40 nm k: 12 W·m−1·K−1 |
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Wang, L.; Ren, W.; Wen, J.; Xiong, B. Overview of Phase-Change Electrical Probe Memory. Nanomaterials 2018, 8, 772. https://doi.org/10.3390/nano8100772
Wang L, Ren W, Wen J, Xiong B. Overview of Phase-Change Electrical Probe Memory. Nanomaterials. 2018; 8(10):772. https://doi.org/10.3390/nano8100772
Chicago/Turabian StyleWang, Lei, Wang Ren, Jing Wen, and Bangshu Xiong. 2018. "Overview of Phase-Change Electrical Probe Memory" Nanomaterials 8, no. 10: 772. https://doi.org/10.3390/nano8100772